Author
Black, J
Breward, C
Howell, P
Journal title
SIAM Journal on Applied Mathematics
DOI
10.1137/140984105
Issue
2
Volume
75
Last updated
2023-11-16T09:55:05.867+00:00
Page
289-312
Abstract
Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate and analyse a two-dimensional mathematical model for electron flow across a poorly conducting (glass) layer situated between silver electrodes, based on the drift-diffusion (Poisson-Nernst-Planck) equations. We devise and validate a novel spectral method to solve this model numerically. We find that the current short-circuits through thin glass layer regions. This enables us to determine asymptotic expressions for the average current density for two different canonical glass layer profiles.
Symplectic ID
580165
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Publication type
Journal Article
Publication date
01 Jan 2015
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